s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s ( v ) = 20v i d = 4.9 a ( v g s = 4.5 v ) r d s ( o n ) 33m ( v g s = 4.5v ) r d s ( o n ) 40m ( v g s = 2.5v ) r d s ( o n ) 51m ( v g s = 1.8v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 g s d 2 3 1 a bs olut e max imum r at ings ta = 25 s y m bol 5 s ec s teady s tate uni t v d s v g s t a= 25 4.9 3.77 t a= 70 3.9 3.0 i d m a v al anc he cur r ent * 2 i a s s i ngl e a v al anc he e ner gy e a s m j t a= 25 1.25 0.75 t a= 70 0.8 0.48 r t h jf t j t st g w r t h ja 100 166 /w j unc ti on t em per atur e p ar am eter conti nuous dr ai n cur r ent *1 i d dr ai n- s our c e v ol tage g ate- s our c e v ol tage v p ul s ed dr ai n cur r ent *2 a 20 8 15 15 l= 0.1m h 11.25 s tor age t em per atur e r ange p d p ow er di s s i pati on * 1 t her m al res i s tanc e.j unc ti on- to- a m bi ent * 1 t 5 s ec s teady s tate t her m al res i s tanc e.j unc ti on- to- f oot 50 150 - 55 to 150 * 1 s ur fac e m ounted on 1? x 1? f r4 b oar d. * 2 p ul s e w i dth l i m i ted by m ax i m um j unc ti on tem per atur e p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h n-cha nne l mo s f e t si2 3 1 2 ds-hf ( k i 2 3 1 2 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = 250 a , v g s = 0v 20 v v d s = 20v , v g s = 0v 1 v d s = 20v , v g s = 0v , t a= 70 75 g ate- b ody leak age cur r ent i g s s v d s = 0v , v g s = 8v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s , i d = 250 a 0.45 0.85 v o n- s tate dr ai n cur r ent * 1 i d ( o n ) v d s 10 v , v g s = 4.5 v 15 a v g s = 4.5v , i d = 5.0a 33 v g s = 2.5v , i d = 4.5a 40 v g s = 1.8v , i d = 4.0a 51 f or w ar d t r ans c onduc tanc e * 1 g fs v d s = 15v , i d = 5.0a 40 s t otal g ate char ge q g 11.2 14 g ate s our c e char ge q g s 1.4 g ate dr ai n char ge q g d 2.2 t ur n- o n del ay t i m e t d ( o n ) 15 25 t ur n- o n ri s e t i m e t r 40 60 t ur n- o ff del ay t i m e t d ( o f f ) 48 70 t ur n- o ff f al l t i m e t f 31 45 b ody di ode rev er s e rec ov er y t i m e t r r i f = 1.0a , d i /d t = 100a / s 13 25 m ax i m um b ody - di ode conti nuous cur r ent i s 1.0 a di ode f or w ar d v ol tage v s d i s = 1.0a ,v g s = 0v 0.8 1.2 v r d s ( o n ) m i d = 1.0a , v d s = 1 0v , ,v g e n = 4.5v r l = 10 ,r g = 6 nc ns z er o g ate v ol tage dr ai n cur r ent i d s s a v g s = 4.5v , v d s = 10v , i d = 5.0a s tati c dr ai n- s our c e o n- res i s tanc e * 1 * 1 p ul s e tes t: p w 300u s duty c y c l e 2% . mar k ing m ar k i ng c2* f n-cha nne l mo s f e t si2 3 1 2 ds-hf ( k i 2 3 1 2 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m os f e t ty pic al c har ac t er is it ic s 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 0 3 6 9 12 15 0 1 2 3 4 v g s = 4. 5 thru 2 . 0 v t c = 1 2 5 c - 55 c 1 . 5 v 25 c s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o v d s - drai n -t o -s o u r c e v ol t ag e ( v ) - d r a i n c u r r e n t ( a ) i d v g s - g a t e - t o - s our c e v o l t a g e ( v ) - d r a i n c u r r e n t ( a ) i d 1 . 0 v 0 . 5 v - o n - r e s i s t a n c e ( r ds(on) ) 0 300 600 900 1200 1500 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 0 4 8 12 16 20 0.00 0.03 0.06 0.09 0.12 0.15 0 3 6 9 12 15 v d s - d r a i n - t o - s o u r c e v o l t a g e ( v ) c o s s c i s s v d s = 1 0 v i d = 5 . 0 a i d - d r a i n c u r r e n t ( a ) v g s = 4 . 5 v i d = 5 . 0 a v g s = 1 . 8 v gate charge on-resistance vs. drain current - g a t e - t o - s ou r c e v o l t a g e ( v ) q g - t o t a l g a t e charg e ( n c ) c - capac i t an c e ( p f ) v gs capacitance on-resistance vs. junction t emperature t j - j u n c t i o n t emper a t u r e ( c) (normalized) - o n - r e s i s t a n c e ( r ds(on) ) v g s = 2 . 5 v v g s = 4. 5 v c r s s n-cha nne l mo s f e t si2 3 1 2 ds-hf ( k i 2 3 1 2 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m os f e t . ty pic al c har ac t er is it ic s 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 0 2 4 6 8 i d = 5 . 0 a 20 1 0.01 e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s - o n - r e s i s t a n c e ( r ds(on) ) v s d v ) v ( e g a t l o v n i a r d - o t - e c r u o s - g s - g a t e - t o - s ourc e v o l t a g e ( v ) - s ou r c e curr e n t ( a ) i s 0.1 t j = 1 5 0 c t j = 2 5 c 10 0.01 0 1 10 12 4 6 100 600 0.1 single pulse power t ime ( s e c ) 2 8 p o w e r ( w ) - 0.4 - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 i d = 2 5 0 a threshold v oltage v ari a n c e ( v ) v gs(th) t j - t empe r a t u r e ( c) 10 t a = 2 5 c 10 - 3 10 - 2 0 0 6 0 1 1 10 - 1 10 - 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 s i n gl e p u l s e d u t y c y cl e = 0 . 5 normalized thermal t ransient impedance, junction-to-ambient s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) normal i z e d e f f e c ti ve t ransi en t t herma l i mpeda n c e 1. duty cycle, d = 2. per unit base = r t h j a = 166 c/w 3. t j m - t a = p d m z t h j a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m n-cha nne l mo s f e t si2 3 1 2 ds-hf ( k i 2 3 1 2 d s - h f)
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